Dielectric energy storage capacitors are receiving a great deal of attention owing to their high energy density and fast charging–discharging speed. The current energy storage density of dielectrics is relatively low and cannot meet the requirements of miniaturization of pulsed power equipment. Therefore, increasing the

The recoverable energy storage density decreased from 23.5 to 23.2 J/cm 3 with increasing temperature from 300 K to 380 K and was able to withstand fatigue endurance up to 1 × 10 5 cycling. These excellent properties indicate the PLZST thin film obtained here can have promising potential in high energy storage capacitors.

The charge and discharge energy densities could also be obtained by measuring the transient current or voltage in a high-speed switching RC circuit. 13., 14., 15. Schematic of measurement setup for a ferroelectric capacitor is shown in Fig. 10.3.The capacitor was initially charged to a certain electric voltage by an output DC source.

PYZST thin-films exhibited a high recoverable energy density of U(reco) Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times ACS Appl Mater Interfaces. 2015 Dec

Therefore, thin/thick film capacitors (e.g., RFEs) have received significant attention in developing high-performance ceramic capacitors for energy storage as compared to bulk ceramic capacitors (LDs, FEs, and AFEs) [1,148,149,150].

High-performance lead-free film capacitors with simultaneously large energy storage density and high power density are strongly demanded in applications. Here, a novel relaxor-ferroelectric 0.88Ba0.55Sr0.45TiO3–0.12BiMg2/3Nb1/3O3 (BST–BMN) thin film capacitor was obtained with an ultrahigh recoverable energy storage density (Wrec) of ∼86 J

Excellent energy storage density of 48.5 J cm⁻³ with efficiency of 47.57% are obtained under high breakdown strength ~4800 kV cm⁻¹ in 0.9BST-0.1BFO thin film capacitor.

Moreover, the BaZr 0.35 Ti 0.65 O 3 film capacitor exhibits great energy storage properties when measured from −150 °C to 200 °C. Wrec and η can reach the value of

Here, we realized an ultrahigh recoverable energy density (W rec) (78.7 J cm −3) and efficiency (η) (80.5%) in BaZr 0.35 Ti 0.65 O 3 film capacitors through enhancing the breakdown electric field strength at room temperature. Moreover, the BaZr 0.35 Ti 0.65 O 3 film capacitor exhibits great energy storage properties when measured from −150

Among currently available energy storage (ES) devices, dielectric capacitors are optimal systems owing to their having the highest power density, high operating voltages, and a long lifetime. Standard high-performance ferroelectric-based ES devices are formed of complex-composition perovskites and require precision, high-temperature thin-film fabrication.

As passive components in flexible electronics, the dielectric capacitors for energy storage are facing the challenges of flexibility and capability for integration and

Ferroelectric thin film capacitors have attracted increasing attention because of their high energy storage density and fast charge-discharge speed, but less attention has been paid to the realization of flexible capacitors for wearable electronics and power systems. Especially in the 1.5% Mn-BMT 0.7 film capacitor, an ultrahigh energy

In this work, flexible xMn-BiMg 0.5 Ti 0.7 O 3 (xMn-BMT 0.7) thin film capacitors with ultrahigh energy storage density and good stability are deposited on

This study demonstrates an ultra-thin multilayer approach to enhance the energy storage performance of ferroelectric-based materials. The ultra-thin structure in BiFeO 3 /SrTiO 3 multilayer films induces pronounced diffusion-induced lattice distortion contributing to an increase in Pmax.

Thanks to their excellent compatibility with the complementary metal–oxide-semiconductor (CMOS) process, antiferroelectric (AFE) HfO2/ZrO2-based thin films have emerged as potential candidates for high-performance on-chip energy storage capacitors of miniaturized energy-autonomous systems.

An optimum combination of high energy d. of 54.3 J cm-3 and good storage efficiency of 51.3% are obtained for the ZrO2 film capacitors with 2 nm-thick HAO insert layer.

Dielectric thin-film capacitors (DTFCs) are drawing much attention in energy storage applications because of the high storage energy density and long lifetime, and they are critical components

The results indicate that the 3D HfO 2 thin film MEMS capacitor has enormous potential in energy storage applications in harsh environments, such as

The influence of the Sr content on the microstructures, ferroelectric properties, and energy-storage performances of the thin films were investigated in detail. The Sr 0.6 (Na 0.5 Bi 0.5 ) 0.4 Ti 0.99 Mn 0.01 O 3 thin film exhibits very slim hysteresis loops with the highest electric breakdown field strength due to reduced oxygen vacancies.

The volumetric specific capacitance of MSCs depends on the mass specific capacitance and the density of the active materials for energy storage. As far as the fabrication techniques for MSCs are concerned, the micro/nanofabrication technology can be used to fabricate MSCs with desired patterns, which is compatible for the

As passive components in flexible electronics, the dielectric capacitors for energy storage are facing the challenges of flexibility and capability for integration and miniaturization. In this work, the all-inorganic flexible dielectric film capacitors have been obtained. The flexible capacitors show a desirable recoverable energy density (Wrec) of

The energy storage density (ESD) of the capacitor reaches 28.94 J cm⁻³, and the energy storage efficiency of the capacitor is up to 91.3% under an applied electric field of 3.5 MV cm⁻¹.

For the multilayer ceramic capacitors (MLCCs) used for energy storage, the applied electric field is quite high, in the range of ~20–60 MV m −1, where the induced polarization is greater than

Controlling the crystallization of Nd-doped Bi 4 Ti 3 O 12 thin-films for lead-free energy storage capacitors D. P. Song 0000-0002-2262-4418

Here, in order to overcome these challenges, a novel 3D HfO 2 thin film capacitor is designed and fabricated by an integrated microelectromechanical system (MEMS) process. The energy storage density (ESD) of the capacitor reaches 28.94 J cm −3, and the energy storage efficiency of the capacitor is up to 91.3% under an applied

Herein, we report eco-friendly BiFeO 3-modified Bi 3.15 Nd 0.85 Ti 2.8 Zr 0.2 O 12 (BNTZ) free-lead ferroelectric thin films for high-temperature capacitor applications that

The compositional graded sequence and process design for advanced energy storage capacitors in Na 0.5 Bi 0.5 (Fe 0.03 Ti 0.97)O 3 –based heterostructure thin films are effective approaches to improve energy storage and efficiency, which are beneficial for the applications of energy storage devices.

At present, the compatibility of energy and the environment has become the focus of global attention, and the development of available green energy has been put on the agenda, which puts forward higher requirements for energy storage materials [1,2,3].Dielectric film capacitors can satisfy the needs of microelectronics systems and

1 · Energy storage efficiency of less than 90% is a serious concern among most of the RFE and AFE-based thin film capacitors. For instance, emphasize the issues regarding low η value in AFE thin films by persuading the mechanism behind PNRs dynamics and relaxor behaviour.

High-performance lead-free film capacitors with simultaneously large energy storage density and high power density are strongly demanded in applications. Here, a novel relaxor-ferroelectric 0.88Ba0.55Sr0.45TiO3–0.12BiMg2/3Nb1/3O3 (BST–BMN) thin film capacitor was obtained with an ultrahigh recoverable energy

BiFeO 3 thin film capacitors were fabricated on low cost ITO substrates using PLD technique.. Effect of variation of incident laser energy from 150 mJ to 250 mJ was studied. • igh energy density of 191 mJ/cm 3 with 43% efficiency was obtained for BFO capacitor prepared at 200 mJ laser energy.. Tuning of laser fluence found to be relevant

Dielectric energy storage capacitors are receiving a great deal of attention owing to their high energy density and fast charging–discharging speed. The current energy storage density of dielectrics is relatively low and cannot meet the requirements of miniaturization of pulsed power equipment. Therefore, increasing the

Thin film capacitors have garnered extensive attention and research due to their robust breakdown strength, miniaturization, and substantial energy storage

Energy storage behavior in flexible antiferroelectric (Pb 0.98,La 0.02)(Zr 0.95,Ti 0.05)O 3 thin film capacitors prepared via a direct epitaxial lift-off method Author links open overlay panel Wei Zhuang a, Cheng Shi a, Yu Zhang a, Chunlin Zhao a, Tengfei Lin a, Xiao Wu a, Cong Lin a, Min Gao a

Present work reports the growth of BFO/WO 3 bilayer thin film structures over Silicon, corning and ITO coated glass substrates. BFO layer in BFO/WO 3 bilayer structure was deposited using Pulsed Laser deposition (PLD) technique at optimized laser energy (200 mJ) while WO 3 nanostructured layer was deposited using rf-magnetron

Silva et al. indicated that the BCZT films combined with a thin dielectric HfO 2:Al 2 O 3 (HAO) layer (10-nm-thick) can enhance the energy storage properties (The Pt/BCZT/HAO/Au structure has a recoverable energy-storage density of

By bringing both the energy storage mechanism, these capacitors are capable to have high energy density and power density [[26], [27], [28]]. Park et al. [97] prepared thin film ruthenium oxide electrodes and the highest value observed for the specific capacitance is 788 Fgm-1 for a RuO 2 film thickness of 0.0014 gcm-2.

Flexible antiferroelectric (AFE) thin film capacitors are important for foldable and wearable electronics. This work demonstrates a direct epitaxial lift-off method to fabricate flexible epitaxial AFE thin film capacitors using (Pb 0.98,La 0.02)(Zr 0.95,Ti 0.05)O 3 (PLZT) as an example. The flexible PLZT thin film showed the tetragonal

Compared with the ABO 3 perovskite structure, although the Aurivillius ferroelectric thin film capacitors possess more excellent energy storage performance, there is still room for improvement in terms of BDS and W rec. Moreover, the relaxor behavior of Aurivillius ferroelectric thin film can be further enhanced by doping ions with different

The results show that the energy storage performance of the ternary film is better than that of the binary film due to the polymorphic nanodomains. In addition, as the film in-plane strain is modified from −2% to 2%, the energy density is improved by 80%, and the efficiency also increases from 52% to 77%.

Especially in the 1.5% Mn-BMT0.7 film capacitor, an ultrahigh energy storage density of 124 J cm⁻³ and an outstanding efficiency of 77% are obtained, which is one of the best energy storage